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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF9120/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 26 volt base station equipment. * Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 500 mA IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 26 Watts Power Gain -- 16 dB Efficiency -- 26% Adjacent Channel Power -- 750 kHz: - 45 dBc @ 30 kHz BW 1.98 MHz: - 60 dBc @ 30 kHz BW * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW) Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature
N - Channel Enhancement - Mode Lateral MOSFETs
MRF9120R3 MRF9120LR3
880 MHz, 120 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs
Freescale Semiconductor, Inc.
CASE 375B - 04, STYLE 1 NI - 860
Symbol VDSS VGS PD Tstg TJ
Value - 0.5, +65 - 0.5, +15 250 1.43 - 65 to +150 200
Unit Vdc Vdc W W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (1) 0.45 Unit C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum)
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Rev. 7
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
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MRF9120R3 MRF9120LR3 1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS
(1)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 1 1
Unit Adc Adc Adc
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc)
VGS(th) VGS(Q) VDS(on) gfs
2 -- -- --
3 3.8 0.17 5.3
4 -- 0.4 --
Vdc Vdc Vdc S
Freescale Semiconductor, Inc.
Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) DYNAMIC CHARACTERISTICS (1) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) (1) Each side of device measured separately.
Coss Crss
-- --
50 2
-- --
pF pF
(continued)
MRF9120R3 MRF9120LR3 2
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Gps 15 16.5 -- dB Symbol Min Typ Max Unit
36
39
--
%
IMD
--
- 31
- 28
dBc
IRL
--
- 16
-9
dB
Freescale Semiconductor, Inc.
Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 x 500 mA, f1 = 895.0 MHz, f2 = 895.1 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f1 = 880.0 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f1 = 880.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f1 = 880.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 x 500 mA, f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (2) Device measured in push - pull configuration.
Gps
--
16.5
--
dB
--
40.5
--
%
IMD
--
- 30
--
dBc
IRL
--
- 13
--
dB
P1dB
--
120
--
W
Gps
--
16
--
dB
--
51
--
%
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
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MRF9120R3 MRF9120LR3 3
Freescale Semiconductor, Inc.
B6 B3 VGG + C30 C11 Balun 1 R1 C8 Z16 Z18 Z20 Z22 C19 Z24 RF INPUT Z2 Z1 C2 C1 Z3 Z5 C3 Z7 C4 Z9 C5 Z11 C6 Z13 C7 R2 C9 B1 VGG + C29 B2 C22 B5 + C23 + C24 + C28 VDD Z15 Z25 Z17 Z19 C12 L2 Z21 Z23 C18 Balun 2 DUT C13 C14 C15 C16 C17 C20 Z4 Z6 Z8 Z10 Z12 Z14 Z26 Z27 RF OUTPUT C10 L1 B4 C21 + C25 + C26 + C27 VDD
Freescale Semiconductor, Inc.
Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13
0.420 0.090 0.125 0.095 0.600 0.200 0.500
x 0.080 x 0.420 x 0.220 x 0.220 x 0.220 x 0.630 x 0.630
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z26 Z27
0.040 x 0.630 Microstrip 0.040 x 0.630 Microstrip 0.330 x 0.630 Microstrip 0.450 x 0.630 Microstrip 0.750 x 0.220 Microstrip 0.115 x 0.420 Microstrip 0.130 x 0.080 Microstrip 0.350 x 0.080 Microstrip
Figure 1. 880 MHz Broadband Test Circuit Schematic
MRF9120R3 MRF9120LR3 4
MOTOROLA RF DEVICE DATA
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Table 1. 880 MHz Broadband Test Circuit Component Designations and Values
Part B1, B3, B5, B6 B2, B4 C1, C2 C3, C6 C4 C5 C7, C8 C9, C10, C21, C22 C11, C12 C13 C14 C15 C16 C17 C18, C19 C20 C29, C30 C23, C24, C25, C26 C27, C28 Balun 1, Balun 2 L1, L2 R1, R2 WB1, WB2, WB3, WB4 Board Material PCB Description Long Ferrite Beads, Surface Mount Short Ferrite Beads, Surface Mount 68 pF Chip Capacitors, B Case 0.8 - 8.0 pF Variable Capacitors 7.5 pF Chip Capacitor, B Case 3.3 pF Chip Capacitor, B Case 11 pF Chip Capacitors, B Case 51 pF Chip Capacitors, B Case 6.2 pF Chip Capacitors, B Case 4.7 pF Chip Capacitor, B Case 5.1 pF Chip Capacitor, B Case 3.0 pF Chip Capacitor, B Case 2.7 pF Chip Capacitor, B Case 0.6 - 4.5 pF Variable Capacitor 47 pF Chip Capacitors, B Case 0.4 - 2.5 pF Variable Capacitor 10 F, 35 V Tantalum Chip Capacitors 22 F, 35 V Tantalum Chip Capacitors 220 F, 50 V Electrolytic Capacitors Xinger Surface Mount Balun Transformers 12.5 nH Mini Spring Inductors 510 , 1/4 W Chip Resistors 10 mil Brass Wear Blocks 30 mil Glass Teflon, r = 2.55 Copper Clad, 2 oz Cu Etched Circuit Board 900 MHz Push - Pull Rev 01B 900 MHz Push - Pull Rev 01B CMR CMR Value, P/N or DWG 95F787 95F786 100B680JP500X 44F3360 100B7R5JP150X 100B3R3CP150X 100B110BCA500X 100B510JP500X 100B6R2BCA150X 100B4R7BCA150X 100B5R1BCA150X 100B2R7BCA150X 100B3R0BCA150X 44F3358 100B470JP500X 44F3367 93F2975 92F1853 14F185 3A412 A04T - 5 Manufacturer Newark Newark ATC Newark ATC ATC ATC ATC ATC ATC ATC ATC ATC Newark ATC Newark Newark Newark Newark Anaren Coilcraft Garret
Freescale Semiconductor, Inc.
VGG
C30
B3
B4
MRF9120 900 MHz PUSH PULL Rev 01B
B6
C27 VDD
C10 Balun1 C2 INPUT C1 C3 C4 WB2 C6 R2 C9 C8 WB1 CUTOUT AREA C11 WB3
C25 C26 C21 L1 C19 C17 C13-C15 C16 C18 L2 C20 OUTPUT Balun2
R1
C5
C7
C12
WB4
C22 C23 C24
VGG
C29
B1
B2
B5
C28 VDD
Figure 2. 865 - 895 MHz Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF9120R3 MRF9120LR3 5
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TYPICAL CHARACTERISTICS
h , DRAIN EFFICIENCY (%) 18 17 G ps , POWER GAIN (dB) 16 15 14 13 12 11 10 IMD IRL Gps VDD = 26 Vdc Pout = 120 W (PEP) IDQ = 2 x 500 mA Tone Spacing = 100 kHz 50 45 40 35 -30 -32 -34 -36 -38 860 865 870 875 880 885 890 895 900 f, FREQUENCY (MHz)
-10 -12 -14 -16 -18
Freescale Semiconductor, Inc.
Figure 3. Class AB Broadband Circuit Performance
18 17.5 G ps , POWER GAIN (dB) 17 16.5 16 15.5 15 1 10 1000 mA 800 mA VDD = 26 Vdc f1 = 880.0 MHz f2 = 880.1 MHz 100 1500 mA 1200 mA -10 VDD = 26 Vdc f1 = 880.0 MHz f2 = 880.1 MHz
IMD, INTERMODULATION DISTORTION (dBc)
-20
-30 800 mA -40 1000 mA
-50 1500 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 1200 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus Output Power
18 60 Gps 50 40 30 20 8 6 VDD = 26 Vdc IDQ = 2 x 500 mA f = 880 MHz 10 Pout, OUTPUT POWER (WATTS) AVG. 100 10 0 1 h, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 3rd Order -50 -60 -70 1 10 100 1000 Pout, OUTPUT POWER (WATTS) PEP 5th Order 7th Order VDD = 26 Vdc IDQ = 2 x 500 mA f1 = 880.0 MHz f2 = 880.1 MHz
16 Gps, POWER GAIN (dB) 14 12 10
Figure 6. Intermodulation Distortion Products versus Output Power
Figure 7. Power Gain and Efficiency versus Output Power
MRF9120R3 MRF9120LR3 6
MOTOROLA RF DEVICE DATA
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IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
18 Gps 16 G ps , POWER GAIN (dB) 14 12 10 8 IMD 6 -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 26 Vdc IDQ = 2 x 500 mA f1 = 880.0 MHz f2 = 880.1 MHz 0 -20 -40 40 20 60 h, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) h, DRAIN EFFICIENCY (%) ACPR, ADJACENT CHANNEL POWER RATIO (dB)
Freescale Semiconductor, Inc.
Figure 8. Power Gain, Efficiency and IMD versus Output Power
18 Gps 16 G ps , POWER GAIN (dB) 14 12 10 750 kHz 8 1.98 MHz 6 0.1 1 10 100 VDD = 26 Vdc IDQ = 2 x 500 mA f = 880 MHz IS-97, Pilot, Sync, Paging Traffic Codes 8 through 13
40 20 0 -20 -40 -60 -80
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Power Gain, Efficiency and ACPR versus Output Power
MOTOROLA RF DEVICE DATA
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MRF9120R3 MRF9120LR3 7
Freescale Semiconductor, Inc.
Zo = 5
f = 895 MHz
Zload f = 865 MHz
Zsource f = 895 MHz
f = 865 MHz
Freescale Semiconductor, Inc.
VDD = 26 V, IDQ = 2 x 500 mA, Pout = 120 W PEP f MHz 865 880 895 Zsource 4.89 - j0.2 4.54 + j0.07 3.29 - j1.3 Zload 4.9 - j0.5 4.6 - j0.32 4.2 - j0.04
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
- Z source Z
+ load
Figure 10. Series Equivalent Input and Output Impedance
MRF9120R3 MRF9120LR3 8
MOTOROLA RF DEVICE DATA
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NOTES
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MOTOROLA RF DEVICE DATA
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MRF9120R3 MRF9120LR3 9
Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc.
MRF9120R3 MRF9120LR3 10
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc.
MOTOROLA RF DEVICE DATA
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MRF9120R3 MRF9120LR3 11
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
2X
A G
A 4 L
1 2
Q bbb
M
TA
M
B
M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.085 0.115 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 2.16 2.92 10.80 BSC 21.64 22.05 21.62 22.07 3.00 3.51 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF
B
B (FLANGE)
5 3 4X 4
K
4X
D bbb
M
TA
M
B
M
Freescale Semiconductor, Inc.
ccc ccc E
M
M
TA
(LID)
M
B
M
TA
(LID)
M
B
M
R
N
C
H
F
(INSULATOR)
S
PIN 5
(INSULATOR)
M
bbb T B
M SEATING PLANE
M
TA
M
B
M
bbb
M
TA
M
STYLE 1: PIN 1. 2. 3. 4. 5.
DRAIN DRAIN GATE GATE SOURCE
CASE 375B - 04 ISSUE E NI - 860
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://www.freescale.com
MRF9120R3 MRF9120LR3 12
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MRF9120/D MOTOROLA RF DEVICE DATA

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